CSD88539ND
Manufacturer:
Texas Instruments
Mfr.Part #:
CSD88539ND
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT N-Channel number of channels:2 2.1 W 60 V Continuous Drain Current (ID):15 A 9.4 nC
| Parameter | Value |
|---|---|
| Length | 4.9 mm |
| Width | 3.91 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Height | 1.75 mm |
| Packaging | Reel |
| Thickness | 1.58 mm |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Weight | 540.001716 mg |
| Contact Plating | Gold |
| Number of Elements | 2 |
| Lifecycle Status | Production (Last Updated: 2 days ago) |
| Max Power Dissipation | 2.1 W |
| Power Dissipation | 2.1 W |
| Threshold Voltage | 3 V |
| Number of Channels | 2 |
| Input capacitance | 741 pF |
| Continuous Drain Current (ID) | 15 A |
| Rds On Max | 28 mΩ |
| Drain to Source Voltage (Vdss) | 60 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 6 ns |
| Turn-Off Delay Time | 5 ns |
| Element Configuration | Dual |
| Rise Time | 9 ns |
| Gate Charge | 9.4 nC |
| Drain to Source Resistance | 28 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Gate to Source Threshold Voltage | 2.6 V |
Stock: 242
Distributors
pcbx
pcbxUnit Price$0.63763
Ext.Price$0.63763
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.63763 | $0.63763 |
| 10 | $0.51955 | $5.19550 |
| 25 | $0.47838 | $11.95950 |
| 50 | $0.44047 | $22.02350 |
| 100 | $0.40556 | $40.55600 |
| 300 | $0.37867 | $113.60100 |
| 500 | $0.35357 | $176.78500 |
| 1000 | $0.33514 | $335.14000 |